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參數(shù)資料
| 型號： | APTM100UM45DAG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 215 A, 1000 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 5 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 240K |
| 代理商： | APTM100UM45DAG |
APTM100UM45DAG
APT
M
100UM
45DAG
–
Rev
3
M
ay,
2008
www.microsemi.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.005
0.01
0.015
0.02
0.025
0.03
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Therm
al
Im
pedance
(
°C
/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
0
60
120
180
240
300
360
420
480
540
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(A)
VGS=15, 10V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
120
240
360
480
600
720
012
3
456
78
VGS, Gate to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(A)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
120
240
360
480
ID, Drain Current (A)
R
DS
(on)
Drai
n
to
S
ource
ON
Resi
stance
Normalized to
VGS=10V @ 107.5A
0
30
60
90
120
150
180
210
240
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
Drai
n
Cu
rre
n
t(A)
DC Drain Current vs Case Temperature
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