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參數(shù)資料
| 型號(hào)： | APTM100UM45DAG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 215 A, 1000 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 5 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 240K |
| 代理商： | APTM100UM45DAG |
APTM100UM45DAG
APT
M
100UM
45DAG
–
Rev
3
M
ay,
2008
www.microsemi.com
5 – 6
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
BV
DS
S
,Drai
n
to
S
ource
Breakdown
V
o
lt
age
(Norm
a
li
z
ed)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
R
DS
(on),
Drai
n
to
S
o
urce
ON
resi
stan
ce
(N
or
ma
lize
d
)
VGS=10V
ID=107.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
V
GS
(T
H
),
Threshold
Volt
age
(N
or
ma
lize
d
)
Maximum Safe Operating Area
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(A)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
100
1000
10000
100000
0
1020
3040
50
VDS, Drain to Source Voltage (V)
C,
Capaci
tance
(pF)
Capacitance vs Drain to Source Voltage
VDS=200V
VDS=500V
VDS=800V
0
2
4
6
8
10
12
14
0
350
700 1050 1400 1750 2100
Gate Charge (nC)
V
GS
,Gate
to
S
ource
V
o
ltage
(V
)
Gate Charge vs Gate to Source Voltage
ID=215A
TJ=25°C
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