參數(shù)資料
型號： BLF3G22-30
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKAGE-2
文件頁數(shù)： 10/13頁
文件大?。?/td> 108K
代理商： BLF3G22-30
BLF3G22-30_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 21 June 2007
6 of 13
NXP Semiconductors
BLF3G22-30
UHF power LDMOS transistor
7.4 Two-carrier W-CDMA
Input signals: 3GPP W-CDMA, test model 1, 1-64 DPCH with 66 % clipping;
peak-to-average power ratio: 8.5 dB at 0.01 % probability on CCDF;
channel spacing = 10 MHz; bandwidth = 3.84 MHz.
7.5 Input impedance and load impedances measured under CW
conditions
VDS = 28 V; IDq = 450 mA; Th =25 °C;
f1 = 2115 MHz; f2 = 2165 MHz
VDS =28V; IDq = 450 mA; Th =25 °C;
f1 = 2115 MHz; f2 = 2165 MHz
Fig 5.
Power gain and drain efciency as functions of
average load power; typical values
Fig 6.
IMD3 and ACPR as functions of average load
power; typical values.
PL(AV) (W)
26
42
38
30
34
001aag537
8
12
4
16
20
Gp
(dB)
0
20
30
10
40
50
ηD
(%)
0
ηD
Gp
PL(AV) (W)
26
42
38
30
34
001aag538
40
20
0
IMD3,
ACPR
(dBc)
60
ACPR
IMD3
VDS = 28 V; IDq = 450 mA; PL = 30 W; Th ≤ 25 °CVDS = 28 V; IDq = 450 mA; PL = 30 W; Th ≤ 25 °C
Fig 7.
Input impedance as function of frequency
(series components); typical values
Fig 8.
Load impedance as function of frequency
(series components); typical values
f (GHz)
2
2.2
2.15
2.05
2.1
001aag539
4
8
12
Zi
(
)
0
Ri
Xi
f (GHz)
2
2.2
2.15
2.05
2.1
001aag540
0
4
8
ZL
(
)
8
RL
XL
相關(guān)PDF資料
PDF描述
BLF4G10-160 UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20S-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF3G22-30,112 功能描述:射頻MOSFET電源晶體管 TRANSISTOR UHF PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF3G22-30,135 功能描述:射頻MOSFET電源晶體管 TRANSISTOR UHF PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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BLF404 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power MOS transistor
BLF404,115 功能描述:射頻MOSFET電源晶體管 TRANSISTOR UHF PWR DMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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