參數(shù)資料
型號： BLF3G22-30
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKAGE-2
文件頁數(shù)： 12/13頁
文件大小： 108K
代理商： BLF3G22-30
BLF3G22-30_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 21 June 2007
8 of 13
NXP Semiconductors
BLF3G22-30
UHF power LDMOS transistor
Dimensions in mm.
The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with
Teon dielectric (
ε
r = 2.2); thickness = 0.79 mm.
The other side is unetched and serves as a ground plane.
See Table 8 for list of components.
Fig 10. Component layout for 2.17 GHz class-AB test circuit
C2
C1
C5
C3
C4
C6
C8
C7
R1
C20
L1
BLF3G22-30 testjig input
BLF3G22-30 testjig output
BLF3G22-30 testjig input
BLF3G22-30 testjig output
60
mm
40 mm
C10
C9
C11
C12
C19
C15
C13
C17
C14
C16
C18
001aag543
40 mm
相關(guān)PDF資料
PDF描述
BLF4G10-160 UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20S-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF3G22-30,112 功能描述:射頻MOSFET電源晶體管 TRANSISTOR UHF PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF3G22-30,135 功能描述:射頻MOSFET電源晶體管 TRANSISTOR UHF PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Axial Lead and Cartridge Fuses - Midget
BLF404 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power MOS transistor
BLF404,115 功能描述:射頻MOSFET電源晶體管 TRANSISTOR UHF PWR DMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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