參數(shù)資料
型號： BLF3G22-30
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKAGE-2
文件頁數(shù)： 6/13頁
文件大小： 108K
代理商： BLF3G22-30
BLF3G22-30_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 21 June 2007
2 of 13
NXP Semiconductors
BLF3G22-30
UHF power LDMOS transistor
1.3 Applications
I RF power ampliers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range
I Broadcast drivers
2.
Pinning information
[1]
Connected to ange
3.
Ordering information
4.
Limiting values
Table 2.
Pinning
Pin
Description
Simplied outline
Symbol
1
drain
2
gate
3
source
1
2
3
sym112
1
3
2
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BLF3G22-30
-
anged ceramic package; 2 mounting holes; 2 leads
SOT608A
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
65
V
VGS
gate-source voltage
-
±15
V
ID
drain current
-
12
A
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
-
200
°C
相關(guān)PDF資料
PDF描述
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BLF4G10LS-160 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20S-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF3G22-30,112 功能描述:射頻MOSFET電源晶體管 TRANSISTOR UHF PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF3G22-30,135 功能描述:射頻MOSFET電源晶體管 TRANSISTOR UHF PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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BLF404 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power MOS transistor
BLF404,115 功能描述:射頻MOSFET電源晶體管 TRANSISTOR UHF PWR DMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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