參數(shù)資料
型號(hào)： BLF3G22-30
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKAGE-2
文件頁數(shù)： 2/13頁
文件大?。?/td> 108K
代理商： BLF3G22-30
BLF3G22-30_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 21 June 2007
10 of 13
NXP Semiconductors
BLF3G22-30
UHF power LDMOS transistor
9.
Package outline
Fig 11. Package outline SOT608A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT608A
01-02-22
02-02-11
0
5
10 mm
scale
Flanged ceramic package; 2 mounting holes; 2 leads
SOT608A
p
A
F
b
D
U2
H
Q
c
1
3
2
D1
E
A
w1
AB
M
C
q
U1
C
B
E1
M
w2
UNIT
A
mm
D
b
7.24
6.99
0.15
0.10
10.21
10.01
10.29
10.03
15.75
14.73
9.91
9.65
4.62
3.76
c
U2
0.25
0.51
15.24
qw2
w1
F
1.14
0.89
U1
20.45
20.19
p
3.30
2.92
Q
1.70
1.35
EE1
10.21
10.01
inches
0.285
0.275
0.006
0.004
0.402
0.394
D1
10.29
10.03
0.405
0.395
0.405
0.395
0.620
0.580
0.390
0.380
0.182
0.148
0.010
0.020
0.600
0.045
0.035
0.805
0.795
0.130
0.115
0.067
0.053
0.402
0.394
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
相關(guān)PDF資料
PDF描述
BLF4G10-160 UHF power LDMOS transistor - Application: RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier ; Description: 160 W LDMOS power transistor for base station applications at frequencies from ; Efficiency: 41.5 %; Frequency: 800 - 1000 MHz; Load power: 80 (AV) W; Operating voltage: 28 VDC; Power gain: 19.7 dB
BLF4G10LS-160 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
BLF4G20-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20S-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF3G22-30,112 功能描述:射頻MOSFET電源晶體管 TRANSISTOR UHF PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF3G22-30,135 功能描述:射頻MOSFET電源晶體管 TRANSISTOR UHF PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Axial Lead and Cartridge Fuses - Midget
BLF404 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power MOS transistor
BLF404,115 功能描述:射頻MOSFET電源晶體管 TRANSISTOR UHF PWR DMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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