參數(shù)資料
型號(hào)： BLF3G22-30
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor - Application: PHS ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 35@CW20@PHS %; Frequency: 2000 - 2200 MHz; Load power: 30 (CW) / 10 (PHS) W; Operating voltage: 26 VDC; Power gain: 13.5 (CW) / 16 (PHS) dB
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKAGE-2
文件頁數(shù)： 7/13頁
文件大?。?/td> 108K
代理商： BLF3G22-30
BLF3G22-30_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 21 June 2007
3 of 13
NXP Semiconductors
BLF3G22-30
UHF power LDMOS transistor
5.
Thermal characteristics
[1]
Thermal resistance is determined under specied RF operating conditions
6.
Characteristics
7.
Application information
[1]
Measured within 10 kHz bandwidth.
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-case) thermal resistance from junction to case
Th = 25 °C
[1] 1.85 K/W
Table 6.
Characteristics
Tj = 25 °C unless otherwise specied
Symbol Parameter
Conditions
Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 0.7 mA
65
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 70 mA
2.0
-
3.0
V
IDSS
drain leakage current
VGS =0V; VDS =26V
-
1.5
A
IDSX
drain cut-off current
VGS =VGS(th) +9 V;
VDS =10V
9-
-
A
IGSS
gate leakage current
VGS = ±15 V; VDS = 0 V
-
150
nA
gfs
forward transconductance
VDS =10V; ID = 3.5 A
-
3
-
S
RDS(on)
drain-source on-state resistance VGS =VGS(th) +6 V;
ID = 2.5 A
-
0.3
-
Crs
feedback capacitance
VGS =0V; VDS =26V;
f=1MHz
-
1.7
-
pF
Table 7.
Application information
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Mode of operation: Two-tone CW (100 kHz tone spacing); f = 2170 MHz; IDq = 450 mA
Gp
power gain
PL(PEP) =30W
-
14
-
dB
RLin
input return loss
PL(PEP) =30W
-
15
-
dB
ηD
drain efciency
PL(PEP) =30W
-
33
-
%
IMD3
third order intermodulation
distortion
PL(PEP) =30W
-
24
-
dBc
PL(PEP) < 6 W
-
<
50
-
dBc
Mode of operation: Two-tone W-CDMA; 3GPP test model 1; 1 - 64 DPCH with 66 % clipping;
f1 = 2115 MHz; f2 = 2165 MHz; IDq = 450 mA
Gp
power gain
PL(AV) = 6 W
13
15
-
dB
RLin
input return loss
PL(AV) =6W
-
10
8dB
ηD
drain efciency
PL(AV) = 6 W
18
21
-
%
IMD3
third order intermodulation
distortion
PL(AV) =6W
-
38
35
dBc
ACPR
adjacent channel power ratio PL(AV) =6W
42
38
dBc
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