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參數(shù)資料
| 型號： | BLF4G22-130 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502A ; Power gain: 13.5 dB |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 11/13頁 |
| 文件大?。?/td> | 83K |
| 代理商： | BLF4G22-130 |
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BLF4G22-130_4G22LS-130_1
NXP
B
.V
.2007.
All
r
ights
reser
v
ed.
Pr
oduct
data
sheet
Re
v
.01
—
3
J
u
ly
2007
7
of
13
NXP
Semiconductor
s
BLF4G22-130;
BLF4G22LS-130
UHF
po
wer
LDMOS
transistor
The components are situated on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (
ε
r = 3.5); thickness = 0.76 mm. The other side is unetched and
serves as a ground plane.
See Table 9 for list of components.
Fig 8.
Component layout for 2.14 GHz test circuit
L8
L5
L6
L4
L3
L2
L1
L7
L9
L10
C16
C8 C9 C10
C15
C14
C13
C12
C11
C6
C4
C5
C3
C1
VGG
R1
C2
C7
L14
L11
L12
L13
001aac276
50 mm
75 mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BLF4G22LS-130 | UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB |
| BLF6G10LS-200R | Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB |
| BLF6G10LS-200 | Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB |
| BLF872 | UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB |
| BLH2-21-35PC-1 | MIL SERIES CONNECTOR, RECEPTACLE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF4G22-45,112 | 制造商:NXP Semiconductors 功能描述: |
| BLF4G22LS-130 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G22LS-130,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G22S-100 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G22S-100,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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