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參數(shù)資料
| 型號： | BLF872 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, SOT-800-1, 4 PIN |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 152K |
| 代理商： | BLF872 |
1.
Product prole
1.1 General description
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 250 W broadband over the full UHF band from
470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this
device makes it ideal for digital transmitter applications.
1.2 Features
s Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 0.9 A:
x Peak envelope power load power PL(PEP) = 300 W
x Gain Gp =15dB
x Drain efciency
η
D =43%
x Third order intermodulation distortion IMD3 =
28 dBc
s Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a
quiescent drain current IDq = 2 × 0.9 A:
x Average output power PL(AV) =70W
x Gain Gp =15dB
x Drain efciency
η
D =30%
x Third order intermodulation distortion IMD3 =
28 dBc (4.3 MHz from center
frequency)
s Advanced ange material for optimum thermal behavior and reliability
s Excellent ruggedness
s High power gain
s Designed for broadband operation (UHF band)
s Excellent reliability
s Internal input and output matching for high gain and optimum broadband operation
s Source on underside eliminates DC isolators, reducing common-mode inductance
s Easy power control
BLF872
UHF power LDMOS transistor
Rev. 01 — 20 February 2006
Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF872,112 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS 300W UHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF878 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF878,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF878_09 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor |
| BLF878112 | 制造商:NXP Semiconductors 功能描述:N CH UHF BROADCAST POWER LDMOS 40V 470 |
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