參數(shù)資料
型號: BSH104
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: N-channel enhancement mode MOS transistor
中文描述: 1100 mA, 12 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù): 2/8頁
文件大?。?/td> 51K
代理商: BSH104
1997 Nov 26
2
Philips Semiconductors
Objective specification
N-channel enhancement mode
MOS transistor
BSH104
FEATURES
High-speed switching
No secondary breakdown
Direct interface to C-MOS, TTL, etc.
Very low threshold.
APPLICATIONS
‘Glue-logic’: interface between logic blocks and/or
periphery
Power management
DC to DC converters
General purpose switch
Battery powered applications.
DESCRIPTION
N-channel enhancement mode MOS transistor in a SOT23
SMD package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING
PIN
SYMBOL
DESCRIPTION
1
2
3
g
s
d
gate
source
drain
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
s
d
g
MAM273
2
1
3
Top view
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
V
SD
V
GS
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
0.4
12
1
±
8
1.1
0.3
0.5
V
V
V
V
A
W
V
GD
= 0; I
S
= 0.5 A
V
DS
= V
GS
; I
D
= 1 mA
T
s
= 80
°
C
V
GS
= 2.5 V; I
D
= 0.65 A
T
s
= 80
°
C
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