- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373026 > BSH104 (NXP SEMICONDUCTORS) N-channel enhancement mode MOS transistor PDF資料下載
參數(shù)資料
| 型號： | BSH104 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel enhancement mode MOS transistor |
| 中文描述： | 1100 mA, 12 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 51K |
| 代理商： | BSH104 |
1997 Nov 26
4
Philips Semiconductors
Objective specification
N-channel enhancement mode
MOS transistor
BSH104
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
t.b.f.
t.b.f.
t.b.f.
t.b.f.
MAX.
100
±
100
0.23
0.3
0.4
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
V
GS
= 0; I
D
= 10
μ
A
V
GS
= V
DS
; I
D
= 1 mA
V
GS
= 0; V
DS
= 9.6 V
V
DS
= 0; V
GS
=
±
8 V
V
GS
= 4.5 V; I
D
= 0.65 A
V
GS
= 2.5 V; I
D
= 0.65 A
V
GS
= 1.8 V; I
D
= 0.32 A
V
GS
= 0; V
DS
= 9.6 V; f = 1 MHz
V
GS
= 0; V
DS
= 9.6 V; f = 1 MHz
V
GS
= 0; V
DS
= 9.6 V; f = 1 MHz
V
GS
= 6 V; V
DD
= 6 V; I
D
= 0.65 A;
T
amb
= 25
°
C
V
DD
= 6 V; I
D
= 0.65 A;
T
amb
= 25
°
C
V
DD
= 6 V; I
D
= 0.65 A;
T
amb
= 25
°
C
12
0.4
V
V
nA
nA
pF
pF
pF
pC
C
iss
C
oss
C
rss
Q
G
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
Q
GS
gate-source charge
t.b.f.
pC
Q
GD
gate-drain charge
t.b.f.
pC
Switching times
t
d(on)
turn-on delay time
V
GS
= 0 to 6 V; V
DD
= 6 V;
I
D
= 0.65 A; R
gen
= 6
V
GS
= 0 to 6 V; V
DD
= 6 V;
I
D
= 0.65 A; R
gen
= 6
V
GS
= 0 to 6 V; V
DD
= 6 V;
I
D
= 0.65 A; R
gen
= 6
V
GS
= 6 to 0 V; V
DD
= 6 V;
I
D
= 0.65 A; R
gen
= 6
V
GS
= 6 to 0 V; V
DD
= 6 V;
I
D
= 0.65 A; R
gen
= 6
V
GS
= 6 to 0 V; V
DD
= 6 V;
I
D
= 0.65 A; R
gen
= 6
t.b.f.
ns
t
f
fall time
t.b.f.
ns
t
on
turn-on switching time
t.b.f.
ns
t
d(off)
turn-off delay time
t.b.f.
ns
t
r
rise time
t.b.f.
ns
t
off
turn-off switching time
t.b.f.
ns
Source-drain diode
V
SD
t
rr
source-drain diode forward voltage
reverse recovery time
V
GD
= 0; I
S
= 0.5 A
I
S
= 0.5 A; di/dt =
100 A/
μ
s
t.b.f.
1
V
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BSH106 | N-channel enhancement mode MOS transistor |
| BSH107 | N-channel enhancement mode MOS transistor |
| BSH112 | N-channel enhancement mode field-effect transistor |
| BSH206 | P-channel enhancement mode MOS transistor |
| BSH299 | P-channel enhancement mode MOS transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSH104T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 12V V(BR)DSS | SOT-23 |
| BSH105 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 20V 1.05A SOT23 |
| BSH105 /T3 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSH105 T/R | 功能描述:MOSFET TAPE7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSH105,215 | 功能描述:MOSFET TAPE7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。