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參數(shù)資料
| 型號： | BSH104 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel enhancement mode MOS transistor |
| 中文描述： | 1100 mA, 12 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 51K |
| 代理商： | BSH104 |
1997 Nov 26
3
Philips Semiconductors
Objective specification
N-channel enhancement mode
MOS transistor
BSH104
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
3.
4.
T
s
is the temperature at the soldering point of the drain lead.
Pulse width and duty cycle limited by maximum junction temperature.
Device mounted on a printed-circuit board with a R
th a-tp
(ambient to tie-point) of 27.5 K/W.
Device mounted on a printed-circuit board with a R
th a-tp
(ambient to tie-point) of 90 K/W.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
V
GS
I
D
I
DM
P
tot
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
55
55
12
±
8
1.1
4.5
0.5
0.75
0.54
+150
+150
V
V
A
A
W
W
W
°
C
°
C
T
s
= 80
°
C; note 1
note 2
T
s
= 80
°
C
T
amb
= 25
°
C; note 3
T
amb
= 25
°
C; note 4
T
stg
T
j
storage temperature
operating junction temperature
Source-drain diode
I
S
I
SM
source current (DC)
peak pulsed source current
T
s
= 80
°
C
note 2
0.5
2
A
A
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
140
K/W
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| BSH105 T/R | 功能描述:MOSFET TAPE7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSH105,215 | 功能描述:MOSFET TAPE7 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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