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參數(shù)資料
| 型號： | BSH106 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel enhancement mode MOS transistor |
| 中文描述： | 1050 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SC-88, 6 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 146K |
| 代理商： | BSH106 |
Philips Semiconductors
Product specification
N-channel enhancement mode
MOS transistor
BSH106
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
Fig.8. Typical transconductance, T
j
= 25 C
g
fs
= f(I
D
)
Fig.9. Normalised drain-source on-state resistance.
R
DS(ON)
/R
DS(ON)25 C
= f(T
j
)
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
BSH105
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Gate-Source Voltage, VGS (V)
VDS > ID X RDS(on)
Tj = 25 C
150 C
Drain Current, ID (A)
Threshold Voltage, VGS(to), (V)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
25
50
75
100
125
150
Junction Temperature, Tj (C)
minimum
typical
BSH105
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
Drain Current, ID (A)
Transconductance, gfs (S)
BSH105
1E-07
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
0
0.2
0.4
0.6
0.8
1
Gate-Source Voltage, VGS (V)
Drain Current, ID (A)
VDS = 5 V
Tj = 25 C
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
0
25
50
75
100
125
150
Junction Temperature, Tj (C)
VGS = 4.5 V
2.5 V
1.8 V
RDS(ON) @ Tj
RDS(ON) @ 25C
BSH105
10
100
1000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
August 1998
4
Rev 1.000
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