參數(shù)資料
型號: BSH206
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: P-channel enhancement mode MOS transistor
中文描述: 750 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: PLASTIC, SC-88, 6 PIN
文件頁數(shù): 3/7頁
文件大?。?/td> 144K
代理商: BSH206
Philips Semiconductors
Product specification
P-channel enhancement mode
MOS transistor
BSH206
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
a
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
a
); conditions: V
GS
-10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-a
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Normalised Power Dissipation, PD (%)
0
20
40
60
80
100
120
0
25
50
75
100
125
150
Ambient Temperature, Ta (C)
BSH105
0.1
1
10
100
1000
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
Pulse width, tp (s)
Peak Pulsed Drain Current, IDM (A)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
Normalised Drain Current, ID (%)
0
20
40
60
80
100
120
0
25
50
75
100
125
150
Ambient Temperature, Ta (C)
BSH205
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
-2
-1.5
-1
-0.5
Drain-Source Voltage, VDS (V)
0
Drain current, ID (A)
-0.9 V
-1.1 V
4.5 V
-1.8 V
-1 V
Tj = 25 C
-1.2 V
-1.3 V
VGS = -1.4 V
-2.5 V
BSH205
0.01
0.1
1
10
100
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
d.c.
100 ms
10 ms
RDS(on) = VDS/ ID
tp = 100 us
1 ms
BSH205
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-1.4
-1.2
-1
-0.8
-0.6
-0.4
Drain Current, ID (A)
-0.2
0
Drain-Source On Resistance, RDS(on) (Ohms)
-1V
-1.1 V
VGS = -4.5V
-1.2 V
Tj = 25 C
-1.4 V
-0.9 V
-2.5 V
-1.3 V
-1.8 V
August 1998
3
Rev 1.000
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