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參數(shù)資料
| 型號： | BSH299 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-channel enhancement mode MOS transistor |
| 中文描述： | 200 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 93K |
| 代理商： | BSH299 |
1998 Feb 18
3
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
3.
4.
T
s
is the temperature at the soldering point of the drain lead.
Pulse width and duty cycle limited by maximum junction temperature.
Device mounted on a printed-circuit board with an R
th a-tp
(ambient to tie-point) of 27.5 K/W.
Device mounted on a printed-circuit board with an R
th a-tp
(ambient to tie-point) of 90 K/W.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
50
±
20
0.2
0.8
0.7
0.98
0.66
+150
150
UNIT
V
DS
V
GSO
I
D
I
DM
P
tot
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
55
55
V
V
A
A
W
W
W
°
C
°
C
open drain
T
s
=
80
°
C; note 1
note 2
T
s
= 80
°
C; see Fig.2
T
amb
= 25
°
C; note 3; see Fig.2
T
amb
= 25
°
C; note 4; see Fig.2
T
stg
T
j
storage temperature
operating junction temperature
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point; see Fig.4
100
K/W
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