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參數(shù)資料
| 型號(hào)： | BSH299 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | P-channel enhancement mode MOS transistor |
| 中文描述： | 200 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 93K |
| 代理商： | BSH299 |
1998 Feb 18
4
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
50
0.8
TYP.
MAX.
2
100
10
60
±
10
10
UNIT
V
(BR)DSS
V
GSth
I
DSS
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
V
GS
= 0; I
D
=
10
μ
A
V
GS
= V
DS
; I
D
=
1 mA
V
GS
= 0; V
DS
=
40 V
V
GS
= 0; V
DS
=
50 V
V
GS
= 0; V
DS
=
50 V; T
j
= 125
°
C
V
GS
=
±
20 V; V
DS
= 0
V
GS
=
10 V; I
D
=
0.13 A;
see Fig.10
V
DS
=
25 V; I
D
=
0.13 A
V
GS
= 0; V
DS
=
25 V; f = 1 MHz;
see Fig.7
V
V
nA
μ
A
μ
A
nA
I
GSS
R
DSon
gate leakage current
drain-source on-state resistance
y
fs
C
iss
C
oss
C
rss
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
50
25
15
3.5
45
25
12
mS
pF
pF
pF
Switching times (see Figs
5
and
6
)
t
on
turn-on switching time
V
GS
= 0 to
10 V; V
DD
=
40 V;
I
D
=
0.2 A
V
GS
=
10 to 0 V; V
DD
=
40 V;
I
D
=
0.2 A
3
ns
t
off
turn-off switching time
7
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSH-30-01-F-D-A | 制造商:Samtec Inc 功能描述:CONN SCKT STRP SKT 60 POS 0.5MM SLDR ST SMD - Bulk |
| BSH301 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel enhancement mode MOS transistor |
| BSHORTNOSE | 制造商:Jonard Industries 功能描述:SHORT NOSE B TYPE PLIER |
| BSI-0.8S3R0N | 制造商:Bellnix Co Ltd 功能描述:Bulk |
| BSI-0.8S6R0N | 制造商:Bellnix Co Ltd 功能描述:Bulk |
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