參數(shù)資料
型號： BUK9608-55A
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | TO-263AB
中文描述： 晶體管| MOSFET的| N溝道| 55V的五（巴西）直| 75A條（丁）|對263AB
文件頁數(shù)： 7/14頁
文件大?。?/td> 327K
代理商： BUK9608-55A
Philips Semiconductors
BUK95/9608-55A
TrenchMOS logic level FET
Product data
Rev. 03 — 6 May 2002
2 of 14
9397 750 09573
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
[1]
Current is limited by power dissipation chip rating
[2]
Continuous current is limited by package.
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
-
55
V
ID
drain current (DC)
Tmb =25 °C; VGS = 5 V
-
125
A
Ptot
total power dissipation
Tmb =25 °C
-
253
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
Tj =25 °C; VGS =5V; ID =25A
6.8
8
m
Tj =25 °C; VGS = 4.5 V; ID =25A
-
8.5
m
Tj =25 °C; VGS = 10 V; ID = 25 A
6.4
7.5
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
-
55
V
VDGR
drain-gate voltage (DC)
RGS =20k
-55
V
VGS
gate-source voltage (DC)
-
±15
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V;
-
125
A
-75
A
Tmb = 100 °C; VGS =5V; Figure 2
-75
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s;
-
503
A
Ptot
total power dissipation
Tmb =25 °C; Figure 1
-
253
W
Tstg
storage temperature
55
+175
°C
Tj
junction temperature
55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
-
125
A
-75
A
IDRM
peak reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
-
503
A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche
energy
unclamped inductive load; ID =75A;
VDS ≤ 55 V; VGS =5V; RGS =50 ;
starting Tmb =25 °C
-
670
mJ
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參數(shù)描述
BUK9608-55A /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9608-55A,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9608-55B 制造商:NXP Semiconductors 功能描述:MOSFET N CH 55V 75A SOT404
BUK9608-55B /T3 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK9608-55B,118 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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