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參數(shù)資料
| 型號(hào)： | BUT12 |
| 廠商： | 永盛國(guó)際集團(tuán) |
| 英文描述： | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
| 中文描述： | 擴(kuò)散硅功率晶體管（一般）的說(shuō)明 |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | BUT12 |
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT12; BUT12A
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Measured with a half-sinewave voltage (curve tracer).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining voltage I
C
= 100 mA; I
Boff
= 0; L = 25 mH; see
Figs 6 and 7
BUT12
BUT12A
collector-emitter saturation voltage
BUT12
I
C
= 6 A; I
B
= 1.2 A; see Figs 8 and 10
BUT12A
I
C
= 5 A; I
B
= 1 A; see Figs 8 and 10
base-emitter saturation voltage
BUT12
I
C
= 6 A; I
B
= 1.2 A; see Fig.8
BUT12A
I
C
= 5 A; I
B
= 1 A; see Fig.8
collector-emitter cut-off current
V
CE
= V
CESmax
; V
BE
= 0; note 1
V
CE
= V
CESmax
; V
BE
= 0; T
j
= 125
°
C;
note 1
emitter-base cut-off current
V
EB
= 9 V; I
C
= 0
DC current gain
V
CE
= 5 V; I
C
= 10 mA; see Fig.11
V
CE
= 5 V; I
C
= 1 A; see Fig.11
400
450
V
V
V
CEsat
1.5
1.5
V
V
V
BEsat
1.5
1.5
1
3
V
V
mA
mA
I
CES
I
EBO
h
FE
10
10
18
20
10
35
35
mA
Switching times resistive load
(see Figs 12 and 13)
t
on
turn-on time
BUT12
BUT12A
storage time
BUT12
BUT12A
fall time
BUT12
BUT12A
I
Con
= 6 A; I
Bon
=
I
Boff
= 1.2 A
I
Con
= 5 A; I
Bon
=
I
Boff
= 1 A
1
1
μ
s
μ
s
t
s
I
Con
= 6 A; I
Bon
=
I
Boff
= 1.2 A
I
Con
= 5 A; I
Bon
=
I
Boff
= 1 A
4
4
μ
s
μ
s
t
f
I
Con
= 6 A; I
Bon
=
I
Boff
= 1.2 A
I
Con
= 5 A; I
Bon
=
I
Boff
= 1 A
0.8
0.8
μ
s
μ
s
Switching times inductive load
(see Figs 14 and 15)
t
s
storage time
BUT12
I
Con
= 6 A; I
Bon
= 1.2 A; V
CL
= 250 V;
T
c
= 100
°
C
I
Con
= 5 A; I
Bon
= 1 A; V
CL
= 300 V;
T
c
= 100
°
C
1.9
2.5
μ
s
BUT12A
1.9
2.5
μ
s
t
f
fall time
BUT12
I
Con
= 6 A; I
Bon
= 1.2 A; V
CL
= 250 V;
T
c
= 100
°
C
I
Con
= 5 A; I
Bon
= 1 A; V
CL
= 300 V;
T
c
= 100
°
C
200
300
ns
BUT12A
200
300
ns
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|---|---|
| BUT12A | 功能描述:兩極晶體管 - BJT NPN Sil Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUT12A/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR HOCHSPANNUNG BIPOLAR |
| BUT12AF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors |
| BUT12AI | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUT12AI,127 | 功能描述:兩極晶體管 - BJT BUT12AI/SOT78/RAILH// RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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