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參數(shù)資料
| 型號： | CXK77B3640AGB |
| 廠商： | Sony Corporation |
| 英文描述： | 4Mb Late Write HSTL High Speed Synchronous SRAM(128K x 36Bit)(4M位、寫延遲、高速邏輯收發(fā)（HSTL）、高速同步靜態(tài)RAM (128K x 36位)) |
| 中文描述： | 4Mb的后寫入HSTL高速同步SRAM（128K的x 36Bit）（4分位，寫延遲，高速邏輯收發(fā)（HSTL），高速同步靜態(tài)隨機存儲器（128K的× 36位）） |
| 文件頁數(shù)： | 32/33頁 |
| 文件大?。?/td> | 284K |
| 代理商： | CXK77B3640AGB |
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4Mb, Sync LW, HSTL, rev 1.5
32 / 33
July 23, 1998
SONY
CXK77B3640AGB / CXK77B1840AGB
Preliminary
rev 1.0
04/14/98
1. Modified AC Timing Characteristics (continued)
DC Mode:
Added “Clock Pulse Width timing parameters characterized but
not 100% tested at 1.3ns” note for -37 and -38 bins.
-37
T
CHQV
, T
CHQZ
-38
T
KHKL
, T
KLKH
, T
CHCL
, T
CLCH
T
KHDX
T
KHQV
T
GLQV
, T
GHQZ
-4
T
KHQV
-45
T
KHQV
2. Changed all maximum ambient temperature references (T
A
Max)
from 70
o
C to 85
o
C (pp. 9-16).
2.0ns to 2.1ns
1.4ns to 1.3ns
0.8ns to 0.7ns
5.1ns to 4.9ns
1.9ns to 1.8ns
5.3ns to 5.2ns
6.5ns to 6.0ns
rev 1.1
05/08/98
1. Changed 1.9V V
DDQ
AC Test Conditions (p. 16).
Deleted Input High and Low Levels.
Added Address / Control Input High and Low Levels.
Added Data Input High and Low Levels.
Changed Input Reference Voltage (V
REF
) from 0.75V to 0.85V.
rev 1.2
05/18/98
1. Changed V
IH
/ V
IL
levels for Boundary Scan chain signals during
Boundary Scan test mode (p. 10).
rev 1.3
05/26/98
1. Modified AC Timing Characteristics
R-R Mode:
-4
T
KHKH
5.0ns to 3.8ns
rev 1.4
06/18/98
1. Modified AC Timing Characteristics
R-R Mode:
Changed T
DVKH
to 1.0ns in all bins.
-37
T
KHKH
R-L, R-FT Modes:
Changed T
DVKH
to 1.0ns in all bins.
-37
T
KHKH
T
KHQV
T
KLQV
-38
T
KHKH
T
KHQV
-4
T
KHKH
T
KHQV
DC Mode:
Added “DC operation and timing parameters tested in
CXK77B3640A only” note for all bins.
3.7ns to 3.45ns
4.5ns to 4.8ns
4.5ns to 4.6ns
2.1ns to 2.2ns
5.0ns to 4.8ns
5.0ns to 4.8ns
5.5ns to 5.2ns
5.5ns to 5.2ns
Rev. #
Rev. date
Description of Modification
相關PDF資料 |
PDF描述 |
|---|---|
| CXK77B1840AGB | 4Mb Late Write HSTL High Speed Synchronous SRAM(256K x 18Bit)(4M位、寫延遲、高速邏輯收發(fā)（HSTL）、高速同步靜態(tài)RAM (256K x 18位)) |
| CXK77B3641GB | 4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、寫延遲、LVTTL高速同步靜態(tài)RAM (128K x 36位)) |
| CXK77V3211Q-12 | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:White/Red; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes |
| CXK77V3211Q-14 | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:White/Red; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Conductor Plating:Tin; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes |
| CXK77V3211Q | 32768-word by 32-bit High Speed Synchronous Static RAM(32768字 × 32位高速同步靜態(tài)RAM) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CXK77B3640GB-45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM |
| CXK77B3640GB-4A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM |
| CXK77B3641GB-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM |
| CXK77B3641GB-6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x36 Fast Synchronous SRAM |
| CXK77K18R320GB | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32Mb LW R-R HSTL High Speed Synchronous SRAM (2Mb x 18) |
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