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參數(shù)資料
| 型號： | CY7C1425BV18-200BZXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 4M X 9 QDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 |
| 文件頁數(shù)： | 26/28頁 |
| 文件大小： | 666K |
| 代理商： | CY7C1425BV18-200BZXC |
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CY7C1410BV18, CY7C1425BV18
CY7C1412BV18, CY7C1414BV18
Document #: 001-07036 Rev. *D
Page 7 of 28
CQ
Echo Clock
CQ Referenced with Respect to C. This is a free - running clock and is synchronized to the Input clock
for output data (C) of the QDR-II. In the single clock mode, CQ is generated with respect to K. The timings
for the echo clocks is shown in the Switching Characteristics on page 23.
CQ
Echo Clock
CQ Referenced with Respect to C. This is a free - running clock and is synchronized to the Input clock
for output data (C) of the QDR-II. In the single clock mode, CQ is generated with respect to K. The timings
for the echo clocks is shown in the Switching Characteristics on page 23.
ZQ
Input
Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus
impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor connected
between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which enables the
minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.
DOFF
Input
DLL Turn Off
Active LOW. Connecting this pin to ground turns off the DLL inside the device. The timing
in the DLL turned off operation differs from those listed in this data sheet. For normal operation, this pin
can be connected to a pull up through a 10-Kohm or less pull up resistor. The device behaves in DDR-I
mode when the DLL is turned off. In this mode, the device can be operated at a frequency of up to 167
MHz with QDR-I timing.
TDO
Output
TDO for JTAG.
TCK
Input
TCK Pin for JTAG.
TDI
Input
TDI Pin for JTAG.
TMS
Input
TMS Pin for JTAG.
NC
N/A
Not Connected to the Die. Can be tied to any voltage level.
NC/72M
N/A
Not Connected to the Die. Can be tied to any voltage level.
NC/144M
N/A
Not Connected to the Die. Can be tied to any voltage level.
NC/288M
N/A
Not Connected to the Die. Can be tied to any voltage level.
VREF
Input-
Reference
Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and AC
measurement points.
VDD
Power Supply Power Supply Inputs to the Core of the Device.
VSS
Ground
Ground for the Device.
VDDQ
Power Supply Power Supply Inputs for the Outputs of the Device.
Pin Definitions (continued)
Pin Name
IO
Pin Description
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相關代理商/技術參數(shù) |
參數(shù)描述 |
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| CY7C1425JV18-250BZC | 功能描述:靜態(tài)隨機存取存儲器 4Mx9 QDR-II Burst 2 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1425JV18-250BZI | 功能描述:靜態(tài)隨機存取存儲器 4Mx9 1.8V QDR-II BURST 2 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1425JV18-250BZXC | 功能描述:靜態(tài)隨機存取存儲器 4Mx9 QDR-II Burst 2 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1425JV18-267BZI | 功能描述:靜態(tài)隨機存取存儲器 4Mx9 QDR-II Burst 2 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1425JV18-267BZIT | 功能描述:靜態(tài)隨機存取存儲器 4Mx9 QDR-II Burst 2 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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