參數(shù)資料
型號(hào): DG646BH25
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 晶閘管
英文描述: Gate Turn-off Thyristor
中文描述: 1361.19 A, 2500 V, GATE TURN-OFF SCR
封裝: H, 4 PIN
文件頁數(shù): 18/19頁
文件大?。?/td> 219K
代理商: DG646BH25
DG646BH25
18/19
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes
3.60
±
0.05 x 2.0
±
0.1 deep (One in each electrode)
2
±
52
55
9.6
15
Cathode Aux. Tube
Gate Tube
Cathode
Anode
62.85
100
62.85
Nominal weight: 820g
Clamping force: 20kN
±
10%
Lead length: 505mm
Package outine type code: H
相關(guān)PDF資料
PDF描述
DG648BH GTO Thyristor - Asymmetric - Disc / Puk Devices
DG648BH45 Gate Turn-off Thyristor
DG758BX GTO Thyristor - Asymmetric - Disc / Puk Devices
DG758BX45 ER 26C 26#16 SKT PLUG
DGL-13-1 Sample/Track-and-Hold Amplifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DG646BH25_05 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Gate Turn-off Thyristor
DG646BH25-125A 制造商:Dynex Semiconductor 功能描述:GTO THYRISTOR
DG646BH25-148 制造商:Dynex Semiconductor 功能描述:SCR - PHASE CONTROL THYRISTOR
DG648BH 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GTO Thyristor - Asymmetric - Disc / Puk Devices
DG648BH33 制造商:Dynex Semiconductor 功能描述:GTO THYRISTOR