DG646BH25
7/19
0
20
40
60
80
Peak forward gate current I
FGM
- (A)
2000
1500
1000
500
0
T
O
Conditions:
T
j
= 25
C, I
= 2000A,
C
= 2.0
μ
F, R
S
= 10 Ohms
dI/dt = 300A/
μ
s,
dI
FG
/dt = 30A/
μ
s
V
D
= 1500V
V
D
= 1000V
V
D
= 750V
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
2000
1500
1000
500
0
T
O
Conditions:
T
j
= 25
C, I
= 30A,
C
= 2.0
μ
F, R
S
= 10
,
dI/dt = 300A/
μ
s,
dI
FG
/dt = 30A/
μ
s
V
D
= 1500V
V
D
= 1000V
V
D
= 750V
Fig.8 Turn-on energy vs on-state current
Fig.9 Turn-on energy vs peak forward gate current