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參數(shù)資料
| 型號(hào)： | DG646BH25 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | Gate Turn-off Thyristor |
| 中文描述： | 1361.19 A, 2500 V, GATE TURN-OFF SCR |
| 封裝： | H, 4 PIN |
| 文件頁數(shù)： | 2/19頁 |
| 文件大?。?/td> | 219K |
| 代理商： | DG646BH25 |
DG646BH25
2/19
SURGE RATINGS
Conditions
18.0
1.62 x 10
6
kA
A
2
s
Surge (non-repetitive) on-state current
I
2
t for fusing
10ms half sine. T
j
= 125
o
C
10ms half sine. T
j
=125
o
C
di
T
/dt
Critical rate of rise of on-state current
300
135
V/
μ
s
Max.
Units
Rate of rise of off-state voltage
dV
D
/dt
1000
V/
μ
s
To 66% V
DRM
; V
RG
= -2V, T
j
= 125
o
C
I
TSM
Symbol
Parameter
I
2
t
V
= 1500V, I
T
= 2000A, T
j
= 125
o
C, I
FG
> 30A,
Rise time > 1.0
μ
s
A/
μ
s
To 66% V
DRM
; R
GK
≤
1.5
, T
j
= 125
o
C
GATE RATINGS
Symbol
Parameter
Conditions
V
Units
Max.
16
15
Min.
-
20
-
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
19
60
-
50
30
-
-
μ
s
100
100
V
RGM
This value maybe exceeded during turn-off
I
FGM
P
FG(AV)
P
RGM
di
GQ
/dt
t
ON(min)
t
OFF(min)
μ
s
A/
μ
s
kW
W
A
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Parameter
Conditions
Max.
Min.
R
th(c-hs)
Contact thermal resistance
R
th(j-hs)
-
-
0.045
-
0.006
o
C/W
per contact
Cathode side cooled
Double side cooled
Units
-
0.018
o
C/W
Anode side cooled
o
C/W
0.03
Virtual junction temperature
T
OP
/T
stg
Operating junction/storage temperature range
-
Clamping force
-
125
22.0
18.0
-40
kN
o
C/W
Clamping force 20.0kN
With mounting compound
DC thermal resistance - junction to heatsink
surface
T
vj
125
o
C
o
C
L
S
Peak stray inductance in snubber circuit
nH
200
I
T
= 2000A, V
DM
= 2500V,-
j
= 125C,
di
GQ
/dt = 40A/
s, Cs = 2.0
μ
F
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|---|---|
| DG646BH25_05 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Gate Turn-off Thyristor |
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