參數(shù)資料
型號(hào)： DG648BH
英文描述： GTO Thyristor - Asymmetric - Disc / Puk Devices
中文描述： GTO的晶閘管-不對(duì)稱-光盤/北辰設(shè)備
文件頁(yè)數(shù)： 2/19頁(yè)
文件大?。?/td> 221K
代理商： DG648BH
DG648BH45
2/19
SURGE RATINGS
Conditions
16.0
1.28 x 10
6
kA
A
2
s
Surge (non-repetitive) on-state current
I
2
t for fusing
10ms half sine. T
j
= 125
o
C
10ms half sine. T
j
=125
o
C
di
T
/dt
Critical rate of rise of on-state current
300
175
V/
μ
s
Max.
Units
Rate of rise of off-state voltage
dV
D
/dt
1000
V/
μ
s
To 66% V
DRM
; V
RG
= -2V, T
j
= 125
o
C
I
TSM
Symbol
Parameter
I
2
t
V
= 4500V, I
T
= 2000A, T
j
= 125
o
C, I
FG
> 30A,
Rise time > 1.0
μ
s
A/
μ
s
To 66% V
DRM
; R
GK
≤
1.5
, T
j
= 125
o
C
GATE RATINGS
Symbol
Parameter
Conditions
V
Units
Max.
16
15
Min.
-
20
-
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
19
60
-
50
30
-
-
μ
s
100
100
V
RGM
This value maybe exceeded during turn-off
I
FGM
P
FG(AV)
P
RGM
di
GQ
/dt
t
ON(min)
t
OFF(min)
μ
s
A/
μ
s
kW
W
A
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Parameter
Conditions
Max.
Min.
R
th(c-hs)
Contact thermal resistance
R
th(j-hs)
-
-
0.045
-
0.006
o
C/W
per contact
Cathode side cooled
Double side cooled
Units
-
0.018
o
C/W
Anode side cooled
o
C/W
0.03
Virtual junction temperature
T
OP
/T
stg
Operating junction/storage temperature range
-
Clamping force
-
125
22.0
18.0
-40
kN
o
C/W
Clamping force 20.0kN
With mounting compound
DC thermal resistance - junction to heatsink
surface
T
vj
125
o
C
o
C
L
S
Peak stray inductance in snubber circuit
nH
200
I
T
= 2000A, V
DM
= 4500V,-
j
= 125C,
di
GQ
/dt = 40A/
s, Cs = 2.0
μ
F
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