參數(shù)資料
型號: FSBB20CH60
廠商: Etron Technology, Inc
英文描述: Smart Power Module
中文描述: 智能功率模塊
文件頁數(shù): 12/16頁
文件大?。?/td> 544K
代理商: FSBB20CH60
12
www.fairchildsemi.com
FSBB20CH60 Rev. C
F
Note:
1. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm)
2. By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible.
3. V
FO
output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 4.7k
resistance. Please refer to Figure 9.
4. C
SP15
of around 7 times larger than bootstrap capacitor C
BS
is recommended.
5. V
output pulse width should be determined by connecting an external capacitor(C
FOD
) between C
FOD
(pin7) and COM(pin2). (Example : if C
FOD
= 33 nF, then t
FO
=
1.8
ms
(typ.)) Please refer to the note 5 for calculation method.
6. Input signal is High-Active type. There is a 3.3k
resistor inside the IC to pull down each input signal line to GND. When employing RC coupling circuits, set up such RC couple
that input signal agree with turn-off/turn-on threshold voltage.
7. To prevent errors of the protection function, the wiring around R
F
and C
SC
should be as short as possible.
8. In the short-circuit protection circuit, please select the R
F
C
SC
time constant in the range 1.5~2
μ
s.
9. Each capacitor should be mounted as close to the pins of the SPM as possible.
10. To prevent surge destruction, the wiring between the smoothing capacitor and the P&GND pins should be as short as possible. The use of a high frequency non-inductive
capacitor of around 0.1~0.22
μ
F between the P&GND pins is recommended.
11. Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.
12. C
SPC15
should be over 1uF and mounted as close to the pins of the SPM as possible.
Figure 11. Typical Application Circuit
Fault
15V line
C
BS
C
BSC
R
BS
D
BS
C
BS
C
BSC
R
BS
D
BS
C
BS
C
BSC
R
BS
D
BS
C
SP15
C
SPC15
C
FOD
5V line
R
PF
C
BPF
R
S
M
Vdc
C
DCS
Gating UH
Gating VH
Gating WH
Gating WL
Gating VL
Gating UL
C
PF
C
P
U
R
FU
R
FV
R
FW
R
SU
R
SV
R
SW
C
FU
C
FV
C
FW
W-Phase Current
V-Phase Current
U-Phase Current
R
F
COM
VCC
IN(UL)
IN(VL)
IN(WL)
VFO
C(FOD)
C(SC)
OUT(UL)
OUT(VL)
OUT(WL)
N
U
(21)
N
V
(22)
N
W
(23)
U (24)
V (25)
W (26)
P (27)
(20) V
S(W)
(19) V
B(W)
(18) V
CC(WH)
(16) V
S(V)
(15) V
B(V)
(8) C
SC
(7) C
FOD
(6) V
FO
(5) IN
(WL)
(4) IN
(VL)
(3) IN
(UL)
(2) COM
(1) V
CC(L)
VCC
VB
OUT
COM
IN
VS
VB
VS
OUT
IN
COM
VCC
VCC
VB
OUT
COM
IN
VS
(17) IN
(WH)
(14) V
CC(VH)
(13) IN
(VH)
(12) V
S(U)
(11) V
B(U)
(10) V
CC(UH)
(9) IN
(UH)
Input Signal for Short-
Circuit Protection
C
SC
R
E(UH)
V
SL
R
E(VH)
R
E(WH)
相關(guān)PDF資料
PDF描述
FSBB30CH60 Smart Power Module
FSBCW30 PNP General Purpose Amplifier(PNP通用運(yùn)算放大器)
FSBF10CH60B Smart Power Module
FSBM10SH60A 16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
FSBM10SH60 16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FSBB20CH60B 功能描述:IGBT 模塊 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSBB20CH60BT 功能描述:IGBT 模塊 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSBB20CH60C 功能描述:IGBT 模塊 600V 20A SPM RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSBB20CH60CL 功能描述:IGBT 模塊 20A, Motion-SPM RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSBB20CH60CT 功能描述:IGBT 模塊 600V 20A SPM RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: