參數(shù)資料
型號： FSBB20CH60
廠商： Etron Technology, Inc
英文描述： Smart Power Module
中文描述： 智能功率模塊
文件頁數(shù)： 5/16頁
文件大小： 544K
代理商： FSBB20CH60
5
www.fairchildsemi.com
FSBB20CH60 Rev. C
F
Absolute Maximum Ratings
(T
J
= 25°C, Unless Otherwise Specified)
Inverter Part
Symbol
Note:
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150
°
C(@T
C
≤
100
°
C). However, to insure safe operation of the SPM, the average
junction temperature should be limited to T
J(ave)
≤
125
°
C (@T
C
≤
100
°
C)
Control Part
Symbol
Total System
Symbol
Thermal Resistance
Note:
2. For the measurement point of case temperature(T
C
), please refer to Figure 2.
Parameter
Conditions
Rating
Units
V
PN
Supply Voltage
Applied between P- N
U
, N
V
, N
W
Applied between P- N
U
, N
V
, N
W
450
V
V
PN(Surge)
V
CES
± I
C
± I
CP
P
C
T
J
Supply Voltage (Surge)
500
V
Collector-emitter Voltage
600
V
Each IGBT Collector Current
T
C
= 25°C
T
C
= 25°C, Under 1ms Pulse Width
T
C
= 25°C per One Chip
(Note 1)
20
A
Each IGBT Collector Current (Peak)
40
A
Collector Dissipation
61
W
Operating Junction Temperature
-20 ~ 125
°C
Parameter
Conditions
Rating
Units
V
CC
Control Supply Voltage
Applied between V
CC(UH)
, V
CC(VH)
, V
CC(WH)
, V
CC(L)
-
COM
20
V
V
BS
High-side Control Bias
Voltage
Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
, V
B(W)
-
V
S(W)
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
, IN
(UL)
, IN
(VL)
,
IN
(WL)
- COM
Applied between V
FO
- COM
Sink Current at V
FO
Pin
20
V
V
IN
Input Signal Voltage
-0.3~17
V
V
FO
I
FO
V
SC
Fault Output Supply Voltage
-0.3~V
CC
+0.3
5
V
Fault Output Current
mA
Current Sensing Input Voltage Applied between C
SC
- COM
-0.3~V
CC
+0.3
V
Parameter
Conditions
Rating
Units
V
PN(PROT)
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
V
CC
= V
BS
= 13.5 ~ 16.5V
T
J
= 125°C, Non-repetitive, less than 2
μ
s
-20
°
C
≤
T
J
≤
125
°
C, See Figure 2
400
V
T
C
T
STG
V
ISO
Module Case Operation Temperature
-20 ~ 100
°C
Storage Temperature
-40 ~ 125
°C
Isolation Voltage
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to ceramic substrate
2500
V
rms
Symbol
Parameter
Condition
Min.
Typ. Max. Units
R
th(j-c)Q
R
th(j-c)F
Junction to Case Thermal
Resistance
Inverter IGBT part (per 1/6 module)
-
-
1.63
°C/W
Inverter FWD part (per 1/6 module)
-
-
2.55
°C/W
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FSBB20CH60B 功能描述:IGBT 模塊 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSBB20CH60BT 功能描述:IGBT 模塊 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSBB20CH60C 功能描述:IGBT 模塊 600V 20A SPM RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSBB20CH60CL 功能描述:IGBT 模塊 20A, Motion-SPM RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FSBB20CH60CT 功能描述:IGBT 模塊 600V 20A SPM RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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