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參數(shù)資料
| 型號： | FSBB20CH60 |
| 廠商： | Etron Technology, Inc |
| 英文描述： | Smart Power Module |
| 中文描述： | 智能功率模塊 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 544K |
| 代理商： | FSBB20CH60 |
3
www.fairchildsemi.com
FSBB20CH60 Rev. C
F
Pin Descriptions
Pin Number
Pin Name
Pin Description
1
V
CC(L)
COM
Low-side Common Bias Voltage for IC and IGBTs Driving
2
Common Supply Ground
3
IN
(UL)
IN
(VL)
IN
(WL)
V
FO
C
FOD
C
SC
IN
(UH)
V
CC(UH)
V
B(U)
V
S(U)
IN
(VH)
V
CC(VH)
V
B(V)
V
S(V)
IN
(WH)
V
CC(WH)
V
B(W)
V
S(W)
N
U
N
V
N
W
U
Signal Input for Low-side U Phase
4
Signal Input for Low-side V Phase
5
Signal Input for Low-side W Phase
6
Fault Output
7
Capacitor for Fault Output Duration Time Selection
8
Capacitor (Low-pass Filter) for Short-Current Detection Input
9
Signal Input for High-side U Phase
10
High-side Bias Voltage for U Phase IC
11
High-side Bias Voltage for U Phase IGBT Driving
12
High-side Bias Voltage Ground for U Phase IGBT Driving
13
Signal Input for High-side V Phase
14
High-side Bias Voltage for V Phase IC
15
High-side Bias Voltage for V Phase IGBT Driving
16
High-side Bias Voltage Ground for V Phase IGBT Driving
17
Signal Input for High-side W Phase
18
High-side Bias Voltage for W Phase IC
19
High-side Bias Voltage for W Phase IGBT Driving
20
High-side Bias Voltage Ground for W Phase IGBT Driving
21
Negative DC–Link Input for U Phase
22
Negative DC–Link Input for V Phase
23
Negative DC–Link Input for W Phase
24
Output for U Phase
25
V
Output for V Phase
26
W
Output for W Phase
27
P
Positive DC–Link Input
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSBB20CH60B | 功能描述:IGBT 模塊 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSBB20CH60BT | 功能描述:IGBT 模塊 600V -20A 3-phase RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSBB20CH60C | 功能描述:IGBT 模塊 600V 20A SPM RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSBB20CH60CL | 功能描述:IGBT 模塊 20A, Motion-SPM RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| FSBB20CH60CT | 功能描述:IGBT 模塊 600V 20A SPM RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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