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參數(shù)資料
| 型號： | GS8150V36AB-300IT |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119 |
| 封裝： | FBGA-119 |
| 文件頁數(shù)： | 13/25頁 |
| 文件大?。?/td> | 885K |
| 代理商： | GS8150V36AB-300IT |
GS8150V18/36AB-357/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.08 9/2008
20/25
2003, GSI Technology
JTAG TAP Instruction Set Summary
Instruction
Code
Description
Notes
EXTEST
000
Places the Boundary Scan Register between TDI and TDO.
1
IDCODE
001
Preloads ID Register and places it between TDI and TDO.
1, 2
SAMPLE-Z
010
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
Forces all RAM output drivers to High-Z.
1
RFU
011
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
SAMPLE/
PRELOAD
100
Captures I/O ring contents. Places the Boundary Scan Register between TDI and
TDO.
1
GSI
101
GSI private instruction.
1
RFU
110
Do not use this instruction; Reserved for Future Use.
Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.
1
BYPASS
111
Places Bypass Register between TDI and TDO.
1
Notes:
1. Instruction codes expressed in binary, MSB on left, LSB on right.
2. Default instruction automatically loaded at power-up and in test-logic-reset state.
Notes:
1. Include scope and jig capacitance.
2. Test conditions as shown unless otherwise noted.
JTAG Port AC Test Conditions
Parameter
Conditions
Input high level
VDD – 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
VDDQ/2
Output reference level
VDDQ/2
DQ
VDDQ/2
50
Ω
30pF*
JTAG Port AC Test Load
* Distributed Test Jig Capacitance
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PDF描述 |
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| GS816032T-250T | 512K X 32 CACHE SRAM, 5.5 ns, PQFP100 |
| GS816036BGT-300 | 512K X 36 CACHE SRAM, 5.3 ns, PQFP100 |
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| GS8160E18AT-300 | 1M X 18 CACHE SRAM, 5 ns, PQFP100 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8150V36AB-333 | 制造商:GSI Technology 功能描述:GS8150V36AB-333 - Trays |
| GS8150V36AB-333I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
| GS8150V36AB-357 | 制造商:GSI Technology 功能描述:GS8150V36AB-357 - Trays |
| GS8150V36AB-357I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
| GS8150V36AGB-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
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