參數資料
型號: GS8150V36AB-300IT
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119
封裝: FBGA-119
文件頁數: 24/25頁
文件大小: 885K
代理商: GS8150V36AB-300IT
GS8150V18/36AB-357/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.08 9/2008
8/25
2003, GSI Technology
HSTL I/O DC Input Characteristics
Parameter
Symbol
Min
Typ
Max
Units
Notes
DC Input Logic High
VIH (dc)
VREF + 100
VDDQ + 300
mV
DC Input Logic Low
VIL (dc)
–300
VREF – 100
mV
DC Clock Input Differential Voltage
VDIF (dc)
100
VDDQ + 300
mV
2
VREF DC Voltage
VREF (dc)
VDDQ /2 – 0.1
VDDQ /2 + 0.1
V
1
Clock Input Voltag
VCK (dc)
–300
VDDQ + 300
V
Clock Input Commone Mode Voltage
VCM (dc)
600
750
900
V
Notes:
1. The peak to peak AC component superimposed on VREF may not exceed 5% of the DC component of VREF.
2. SRAM performance is a function of clock input differential voltage (VDIF).
3. To guarantee AC characteristics, VIH,VIL,Trise and Tfall of inputs and clocks must be within 10% of each other.
4. For devices supplied with HSTL I/O input buffers.Compatible with both 1.8 V and 1.5 V I/O drivers.
5. See AC Input Definition drawing below.
HSTL I/O AC Input Characteristics
Parameter
Symbol
Min
Max
Units
Notes
AC Input Logic High
VIH (ac)
VREF + 200
mV
3,4
AC Input Logic Low
VIL (ac)
VREF – 200
mV
3,4
AC Clock Input Differential Voltage
VDIF (ac)
800
mV
2,3
VREF Peak to Peak AC Voltage
VREF (ac)
5% VREF (DC)
mV
1
Notes:
1. The peak to peak AC component superimposed on VREF may not exceed 5% of the DC component of VREF.
2. SRAM performance is a function of clock input differential voltage (VDIF). The RAM can be operated with a single ended clocking with
either CK or CK tied to VREF.
3. To guarantee AC characteristics, VIH,VIL,Trise and Tfall of inputs and clocks must be within 10% of each other.
4. For devices supplied with HSTL I/O input buffers.Compatible with both 1.8 V and 1.5 V I/O drivers.
5. See AC Input Definition drawing below.
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相關代理商/技術參數
參數描述
GS8150V36AB-333 制造商:GSI Technology 功能描述:GS8150V36AB-333 - Trays
GS8150V36AB-333I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM
GS8150V36AB-357 制造商:GSI Technology 功能描述:GS8150V36AB-357 - Trays
GS8150V36AB-357I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM
GS8150V36AGB-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM