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參數(shù)資料
| 型號： | GS8150V36AB-300IT |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119 |
| 封裝： | FBGA-119 |
| 文件頁數(shù)： | 2/25頁 |
| 文件大小： | 885K |
| 代理商： | GS8150V36AB-300IT |
GS8150V18/36AB-357/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.08 9/2008
10/25
2003, GSI Technology
Note:
This parameter is sample tested.
Capacitance
(TA = 25
oC, f = 1 MHZ, V
DD = 1.8 V)
Parameter
Symbol
Test conditions
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
4
pF
Output Capacitance
COUT
VOUT = 0 V
5
pF
Output Capacitance (Clock)
CIN(CK)
VIN = 0 V
5
pF
AC Test Conditions
Parameter
Conditions
Input high level
1.25 V
Input low level
0.25 V
Input rise/fall time (10% to 90%)
0.5 ns/0.5 ns
Input reference level
VDDQ/2
Clock input reference level
Differential cross point
Output reference level
VDDQ/2
Clock (VDIF)
0.75 V
Clock (VCM)
0.75 V
VDDQ
1.5 V
RQ
250
Ω
20% tKC
VSS – 1.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
VDD + 1.0 V
50%
VDD
VIL
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PDF描述 |
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| GS816032T-250T | 512K X 32 CACHE SRAM, 5.5 ns, PQFP100 |
| GS816036BGT-300 | 512K X 36 CACHE SRAM, 5.3 ns, PQFP100 |
| GS816037T-133I | 512K X 36 CACHE SRAM, 3.5 ns, PQFP100 |
| GS8160E18AT-300 | 1M X 18 CACHE SRAM, 5 ns, PQFP100 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8150V36AB-333 | 制造商:GSI Technology 功能描述:GS8150V36AB-333 - Trays |
| GS8150V36AB-333I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
| GS8150V36AB-357 | 制造商:GSI Technology 功能描述:GS8150V36AB-357 - Trays |
| GS8150V36AB-357I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
| GS8150V36AGB-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM |
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