參數(shù)資料
型號(hào)： GS840E18GB-180
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 256K X 18 CACHE SRAM, 8 ns, PBGA119
封裝： BGA-119
文件頁(yè)數(shù)： 3/31頁(yè)
文件大小： 629K
代理商： GS840E18GB-180
Rev: 2.05 6/2000
11/31
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
.
GS840E18/32/36T/B-180/166/150/100
Note:
There are pull up devices on LBO and FT pins and a pull down device on the ZZ pin, so those input pins can be unconnected and the chip will
operate in the default states as specified in the above tables.
Burst Counter Sequences
Byte Write Truth Table
Note:
1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes.
3. All byte I/O’s remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
4. Bytes “C” and “D” are only available on the x32 and x36 versions.
Mode Pin Functions
Mode Name
Pin Name State
Function
Burst Order Control
LBO
L
Linear Burst
H or NC
Interleaved Burst
Output Register Control
FT
L
Flow Through
H or NC
Pipeline
Power Down Control
ZZ
L or NC
Active
H
Standby, IDD = ISB
Function
GW
BW
BA
BB
BC
BD
Notes
Read
H
X
1
Read
H
L
H
1
Write byte A
H
L
H
2, 3
Write byte B
H
L
H
L
H
2, 3
Write byte C
H
L
H
L
H
2, 3, 4
Write byte D
H
L
H
L
2, 3, 4
Write all bytes
H
L
2, 3, 4
Write all bytes
L
X
Linear Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
Interleaved Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS840E18T 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GS840E18T-100 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GS840E18T-100I 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GS840E18T-150 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GS840E18T-150I 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
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