參數(shù)資料
型號: GT28F320D18B110
英文描述: x16 Flash EEPROM
中文描述: x16閃存EEPROM
文件頁數(shù): 68/83頁
文件大?。?/td> 836K
代理商: GT28F320D18B110
28F320D18
64
Product Preview
8.8
Reset Operations
0672_30
NOTES:
1. These specifications are valid for all product versions (packages and speeds).
2. t
is < 100 ns the device may still reset but this is not guaranteed.
3. If RST# is asserted while a block erase or
word program operation is not executing, the reset will complete
within 100 ns.
4. Sampled, but not 100% tested.
Figure 30. AC Waveform for Reset Operations
(A) Reset while device is in read mode
RST# [P]
P1
R21
RST# [P]
P1
P2
RST# [P]
P1
P2
R21
(B) Reset during program or block erase, P1
P2
(C) Reset during program or block erase, P1
P2
Abort
Complete
Abort
Complete
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
R21
Table 12. Reset Specifications
(1)
#
Symbol
Parameter
Notes
Min
Max
Unit
P1
t
PLPH
RST# low to reset during read (If RST# is tied to
V
CC
, this specification is not applicable)
2, 4
100
ns
P2
t
PLRH
RST# Low to reset during block erase
3, 4
22
μs
RST# Low to reset during program
3, 4
12
μs
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