參數(shù)資料
型號: GT28F320D18B110
英文描述: x16 Flash EEPROM
中文描述: x16閃存EEPROM
文件頁數(shù): 69/83頁
文件大?。?/td> 836K
代理商: GT28F320D18B110
28F320D18
Product Preview
65
8.9
Block Erase and Program Performance
NOTES:
1. Typical values measured at T
A
= +25 °C and nominal voltages.
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
#
Symbol
Parameter
(1)
V
PP
V
(in system)
V
(in manufacturing)
Unit
Note
Typ
(1)
Max
(2)
Typ
(1)
Max
(2)
W0
t
BWPB
4-KW Parameter Block Program Time
2
0.1
0.3
0.03
0.1
s
t
BWMB
32-KW Main Block Program Time
2
0.8
2.4
0.24
0.80
s
t
WHQV1
/
t
EHQV1
Word Program Time
2
22
200
8
185
μs
t
WHQV2
/
t
EHQV2
4-KW Parameter BlockErase Time
2
1
4
0.8
4
s
t
WHQV3
/
t
EHQV3
32-KW Main Block Erase Time
2
1.5
5
1.1
5
s
t
WHRH1
/
t
EHRH1
Program Suspend Latency
5
10
5
10
μs
t
WHRH2
/
t
EHRH2
Erase Suspend Latency
5
20
5
20
μs
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