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| 型號(hào)： | HCS12COREUG |
| 廠商： | Motorola, Inc. |
| 英文描述： | MC9S12DT128B |
| 中文描述： | MC9S12DT128B |
| 文件頁(yè)數(shù)： | 99/124頁(yè) |
| 文件大小： | 577K |
| 代理商： | HCS12COREUG |
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MC9S12DT128B Device User Guide — V01.07
99
A.3.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The failure rates for data retention and program/erase cycling are specified at the operating conditions
noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
NOTE:
All values shown in
Table A-12
are target values and subject to further extensive
characterization
Table A-12 NVM Reliability Characteristics
Conditions are shown in
Table A-4
unless otherwise noted
NOTE:
Flash cycling performance is 10 cycles at -40C to +125C. Data retention is
specified for 15 years.
NOTE:
EEPROM cycling performance is 10K cycles at -40C to 125C. Data retention is
specified for 5 years on words after cycling 10K times. However if only 10 cycles
are executed on a word the data retention is specified for 15 years.
4. Burst Programming operations are not applicable to EEPROM
5. Minimum Erase times are achieved under maximum NVM operating frequency f
NVMOP
.
6. Minimum time, if first word in the array is not blank
7. Maximum time to complete check on an erased block
Num C
Rating
Cycles
Data Retention
Lifetime
Unit
1
C Flash/EEPROM (-40C to +125C)
10
15
Years
2
C EEPROM (-40C to +125C)
10,000
5
Years
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| HCS12DBFAMILYPP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HCS12DB Family Product Proposal |
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| HCS12H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:16-bit Microcontroller |
| HCS12HFAMILYPP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HCS12 H-Family Product Proposal |
| HCS12XDFAMILYPP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:HCS12 XD-Family Product Brief |
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