參數(shù)資料
型號: HN29W12814A
廠商: Hitachi,Ltd.
英文描述: 128M AND type Flash Memory(128M AND型閃速存儲器)
中文描述: 128M的AND型快閃記憶體(128兆及型閃速存儲器)
文件頁數(shù): 30/32頁
文件大小: 289K
代理商: HN29W12814A
HN29W12814A Series
30
Enable High System Reliability
The device may fail during a program or erase operation due to write or erase cycle. The following
architecture will enable high system reliability if a failure occurs.
1. Error in read: Error correction that more than 1 bit error correction per each sector read is required for
data reliability.
2. Error in program or erase operation: The device may fail during a program or erase operation due to
write or erase cycle. The status register are indicated that the erase and program operation complete in a
finite time. When the error happens in sector, try to reprogram the data into another sector. Then, prevent
further system access to sector that error happens. Typically, recommended number of a spare sectors are
1.8% within initial usable 32,114 sectors by the each device.
3. Prolongation of Flash memory life: The write/erase endurance is 3
×
10
5
cycles and the data retention
time is more than 10 years under the condition of the error correction.
Package Dimensions
HN29W12814ATT Series (TTP-48/40DA)
0.13
M
0.32
±
0.10
0.30
±
0.05
0.10
1
19.68
20.00 Max
39
25
24
48
1
1
0 – 5
°
0
±
0
0
±
0
±
14.30
±
0.20
0.94 Max
0.50
±
0.10
0.80
10
15
34
0.80
4.00
Hitachi Code
JEDEC Code
EIAJ Code
Weight
(reference value)
TTP-48/40DA
0.60 g
Unit: mm
Dimension including the plating thickness
Base material dimension
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