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參數(shù)資料
| 型號： | HN29W12814A |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 128M AND type Flash Memory(128M AND型閃速存儲器) |
| 中文描述： | 128M的AND型快閃記憶體（128兆及型閃速存儲器） |
| 文件頁數(shù)： | 8/32頁 |
| 文件大?。?/td> | 289K |
| 代理商： | HN29W12814A |
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HN29W12814A Series
8
Command Definition*
1, 2
First bus cycle Second bus cycle
Third bus cycle Four h bus cycl e
Command
Bus
cycles
Operati on
mode*
3
Data
in
Operati on
mode
Data
in
Data
out
Operati on
mode*
3
Data
in
Operati on
mode
Data
in
Ser al read ( 1)
3
Write
00H
Write
SA (1)*
4
Write
SA (2)*
4
Ser al read ( 2)
3
Write
F0H Write
SA (1)*
4
Write
SA (2)*
4
Read
identifier
codes
1
Write
90H
Read
ID*
7, 8
Auto erase
Single s ector 4
Write
20H
Write
SA (1)*
4
Write
SA (2)*
4
Write
B0H*
10
Block
4
Write
7FH Write
BA (1)*
5
Write
BA (2)*
5
Write
B0H*
10
Auto
program
Pr ogram ( 1)*
6
4
Write
10H
Write
SA (1)*
4
Write
SA (2)*
4
Write
40H
*1 0,11
Pr ogram ( 2)*
9
4
Write
1FH Write
SA (1)*
4
Write
SA (2)*
4
Write
40H
*1 0,11
Program (3)
(Control
bytes)*
6
4
Write
0FH Write
SA (1)*
4
Write
SA (2)*
4
Write
40H
*1 0,11
Erase verify
4
Write
A0H Write
SA (1)*
4
Write
SA (2)*
4
Write
A0H
Reset
1
Write
FFH
Read status
register
1
Write
70H
Read
SRD*
7
Clear status
register
Notes: 1. Commands and sector address are latched at rising edge of
WE
pulses. Program data is
latched at rising edge of SC pulses.
2. The chip is in the read status register mode when
RES
is set to V
IHR
first time after the power up.
3. Refer to the command read and write mode in mode selection.
4. SA (1) = Sector address (A0 to A7), SA (2) = Sector address (A8 to A13).
5. BA (1) = Block address (A3 to A7), BA (2) = Block address (A8 to A13). Address inputs of A0 to
A2 are not necessary.
6. By using program (1) and (3), data can additionally be programmed maximum 15 times for each
sector before erase.
7. ID = Identifier code; Manufacturer code (07H), Device code (92H). SRD = Status register data.
8. The manufacturer identifier code is output when
CDE
is low and the device identifier code is
output when
CDE
is high.
9. Before program (2) operations, data in the programmed sector must be erased.
10.No commands can be written during auto program and erase (when the RDY/
Busy
pin outputs a
V
OL
).
11.The fourth cycle of the auto program comes after the program data input is complete.
1
Write
50H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN29W25611T-50 | 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| HN29W25611T | 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| HN29W25611T-50H | 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| HN29W25611 | 256M AND type Flash Memory(256M AND型閃速存儲器) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN29W12814ASERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AND Flash EEPROM |
| HN29W12814ATT-50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|AND FLASH|2X8448KX8|CMOS|TSOP|48PIN|PLASTIC |
| HN29W16814SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AND Flash EEPROM |
| HN29W25611 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| HN29W25611SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AND Flash EEPROM |
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