參數(shù)資料
型號: HN29W12814A
廠商: Hitachi,Ltd.
英文描述: 128M AND type Flash Memory(128M AND型閃速存儲器)
中文描述: 128M的AND型快閃記憶體(128兆及型閃速存儲器)
文件頁數(shù): 6/32頁
文件大?。?/td> 289K
代理商: HN29W12814A
HN29W12814A Series
6
Memory Map and Address
3FFFH
3FFEH
3FFDH
0002H
0001H
0000H
000H
512 bytes
HN29W6411A Series
512 bytes
512 bytes
512 bytes
512 bytes
512 bytes
16 bytes
16 bytes
16 bytes
16 bytes
16 bytes
16 bytes
1
1
200H
20FH
Control bytes
512 + 16 bytes
Column address
Sector address
Address
Sector address
Block address
Cycles
SA (1): First cycle
SA (2): Second cycle
BA (1): First cycle
BA (2): Second cycle
I/O0
A0
A8
×
*
2
A8
I/O1
A1
A9
×
A9
I/O2
A2
A10
×
A10
I/O3
A3
A11
A3
A11
I/O4
A4
A12
A4
A12
I/O5
A5
A13
A5
A13
I/O6
A6
×
A6
×
I/O7
A7
×
A7
×
Notes: 1. Some failed sectors may exist in the device. The failed sectors can be recognized
by reading the sector valid data written in a part of the column address 200 to 205.
The sector valid data must be read and kept
outside of the sector before the sector erase. When the sector is programmed,
the sector valid data should be written back to the sector.
2. An
×
means "Don't care". The pin level can be set to either V
IL
or V
IH
, referred
to DC characteristics.
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