參數(shù)資料
型號: HN29W25611T-50H
廠商: Hitachi,Ltd.
英文描述: 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
中文描述: 256M超過16057型快閃記憶體部門(271299072位)
文件頁數(shù): 2/42頁
文件大小: 331K
代理商: HN29W25611T-50H
HN29W25611T-50H
2
Erase mode
Single sector erase ((2048 + 64) byte unit)
Fast serial read access time:
First access time: 50
μ
s (max)
Serial access time: 50 ns (max)
Low power dissipation:
I
CC2
= 50 mA (max) (Read)
I
SB2
= 50
μ
A (max) (Standby)
I
CC3
/I
CC4
= 40 mA (max) (Erase/Program)
I
SB3
= 5
μ
A (max) (Deep standby)
The following architecture is required for data reliability.
Error correction: more than 3-bit error correction per each sector read
Spare sectors: 1.8% (290 sectors) within usable sectors
Ordering Information
Type No.
Available sector
Package
HN29W25611T-50H
More than 16,057 sectors
12.0
×
18.40 mm
2
0.5 mm pitch
48-pin plastic TSOP I (TFP-48D)
相關PDF資料
PDF描述
HN29W25611 256M AND type Flash Memory(256M AND型閃速存儲器)
HN29W256AH03TE Controller for AND Flash Memory(AND型閃速存儲器控制器)
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