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參數(shù)資料
| 型號： | HN29W25611T-50H |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) |
| 中文描述： | 256M超過16057型快閃記憶體部門（271299072位） |
| 文件頁數(shù)： | 5/42頁 |
| 文件大小： | 331K |
| 代理商： | HN29W25611T-50H |
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HN29W25611T-50H
5
Memory Map and Address
3FFFH
3FFEH
3FFDH
0002H
0001H
0000H
000H
2048 bytes
2048 bytes
2048 bytes
2048 bytes
2048 bytes
2048 bytes
64 bytes
64 bytes
64 bytes
64 bytes
64 bytes
64 bytes
1
1
800H
83FH
Control bytes
2048 + 64 bytes
Column address
Sector address
Address
Sector address
Column address
Cycles
SA (1): First cycle
SA (2): Second cycle
CA (1): First cycle
CA (2): Second cycle
I/O0
A0
A8
A0
A8
I/O1
A1
A9
A1
A9
I/O2
A2
A10
A2
A10
I/O3
A3
A11
A3
A11
I/O4
A4
A12
A4
×
I/O5
A5
A13
A5
×
I/O6
A6
×
*
2
A6
×
I/O7
A7
×
A7
×
Notes: 1. Some failed sectors may exist in the device. The failed sectors can be recognized
by reading the sector valid data written in a part of the column address 800 to 83F
(The specific address is TBD.). The sector valid data must be read and kept outside
of the sector before the sector erase. When the sector is programmed, the sector
valid data should be written back to the sector.
2. An
×
means "Don't care". The pin level can be set to either V
IL
or V
IH
, referred
to DC characteristics.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN29W256H02TE-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY CONTROLLER |
| HN29W256SH02TE-1 | 制造商:Renesas Electronics Corporation 功能描述:256M FLASH CONTROLLER - Trays |
| HN29W3221T-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AND Flash EEPROM |
| HN29W3221T-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AND Flash EEPROM |
| HN29W51214ST | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash Application Design Guidelines Others |
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