參數(shù)資料
型號(hào): HN29W256H02TE
廠商: Hitachi,Ltd.
英文描述: Controller for AND Flash Memory(AND型閃速存儲(chǔ)器控制器)
中文描述: 控制器及快閃記憶體(及型閃速存儲(chǔ)器控制器)
文件頁數(shù): 30/73頁
文件大?。?/td> 333K
代理商: HN29W256H02TE
HN29W256H02TE-1
Address Data 7
6
5
4
3
2
1
0
Description of contents
CIS function
0F0H
1BH CISTPL_CFTABLE_ENTRY
Configuration table entry
tuple
Tuple code
0F2H
06H
TPL_LINK
Link length is 6 bytes
Link to next tuple
0F4H
02H
I
D Configuration index
ATA primary I/O mapped
configuration
I = 0: No Interface byte
D = 0: No Default entry
Configuration index = 2
Configuration table index
byte
TPCE_INDX
0F6H
01H
M
MS
IR IO T
P
M = 0: No Misc info
MS = 00: No Memory space
info
IR = 0: No interrupt info
present
IO = 0: No I/O port info
present
T = 0: No timing info present
P = 1: V
CC
only info
Nominal voltage only follows
R: Reserved
DI: Power down current info
PI: Peak current info
AI: Average current info
SI: Static current info
HV: Max voltage info
LV: Min voltage info
NV: Nominal voltage info
Feature selection byte
TPCE_FS
0F8H
21H
R
DI PI AI SI HV LV NV
Power parameters for V
CC
0FAH
B5H X
Mantissa
Exponent
Nominal voltage = 3.0 V
V
CC
nominal value
Extension byte
0FCH
1EH X
Extension
+0.3 V
0FEH
4DH X
Mantissa
Exponent
Max average current over 10
msec is 45 mA
Max. average current
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