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參數(shù)資料
| 型號(hào)： | HN29W256H02TE |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Controller for AND Flash Memory(AND型閃速存儲(chǔ)器控制器) |
| 中文描述： | 控制器及快閃記憶體（及型閃速存儲(chǔ)器控制器） |
| 文件頁(yè)數(shù)： | 68/73頁(yè) |
| 文件大?。?/td> | 333K |
| 代理商： | HN29W256H02TE |
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HN29W256H02TE-1
Power on Reset Characteristics
Power on reset sequence must need by -PORST at the rising of V
CC
.
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
-CE setup time
tsu(VCC)
100
—
—
ms
VCC rising up time
tpr
0.1
—
100
ms
Power on Reset Timing
Attention for Card Use
In the reset or power off, all register informations are cleared.
Notice that the card insertion/removal should not be executed during host is active, if the card is used in
True IDE mode.
After the card hard reset, soft reset, or power on reset, ATA reset, command applied the card cannot access
during +RDY/-BSY pin is "low" level. Flash card can’t be operated in this case.
Notice that the card removal should be executed after card internal operations completed.
Before the card insertion V
CC
can not be supplied to the card. After confirmation that -CD1, -CD2 pins are
inserted, supply V
CC
to the card.
-OE must be kept at the V
CC
level during power on reset in memory card mode and I/O card mode. -OE
must be kept constantly at the GND level in True IDE mode.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN29W256H02TE-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY CONTROLLER |
| HN29W256SH02TE-1 | 制造商:Renesas Electronics Corporation 功能描述:256M FLASH CONTROLLER - Trays |
| HN29W3221T-12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AND Flash EEPROM |
| HN29W3221T-15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:AND Flash EEPROM |
| HN29W51214ST | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Flash Application Design Guidelines Others |
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