參數(shù)資料
型號: HN29W256H02TE
廠商: Hitachi,Ltd.
英文描述: Controller for AND Flash Memory(AND型閃速存儲器控制器)
中文描述: 控制器及快閃記憶體(及型閃速存儲器控制器)
文件頁數(shù): 51/73頁
文件大小: 333K
代理商: HN29W256H02TE
HN29W256H02TE-1
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Notes
All input/output voltages
Vin, Vout
–0.3 to V
CC
+ 0.3
–0.3 to V
DD
+ 0.3
–0.3 to +6.7
V
1, 2
Vin, Vout
V
1, 3
V
CC
, V
DD
voltage
Operating temperature range
V
CC
, V
DD
Topr
V
–40 to +85
C
Storage temperature range
Notes: 1. Vin, Vout min = –2.0 V for pulse width 20 ns.
2. PT5xxxx, PV5xx: 5 V.
3.
PC3xxxx, PV3x: 3.3 V.
Tstg
–55 to +125
C
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Operating temperature
Ta
0
25
70
C
V
CC
, V
DD
voltage
V
CC
V
CC
, V
DD
4.5
5.0
5.5
V
3.15
3.3
3.45
V
Capacitance
(Ta = 25°C, f = 1MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Note
Input capacitance
Cin
15
pF
Vin = 0 V
1
Output capacitance
Note:
1. This parameter is sampled and not 100% tested.
Cout
15
pF
Vout = 0 V
1
Card System performance
Item
Performance
Set up times (Reset to ready)
100 ms (max)
Set up times (Sleep to idle)
2 ms (max)
Data transfer rate to/from host
8 MB/s burst
Controller overhead (Command to DRQ)
2 ms (max)
Data transfer cycle end to ready (Sector write)
2 ms (typ)
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