參數(shù)資料
型號: HN29W6411A
廠商: Hitachi,Ltd.
英文描述: 64M AND type Flash Memory(64M AND型閃速存儲器)
中文描述: 6400 AND型快閃記憶體(64米及型閃速存儲器)
文件頁數(shù): 19/30頁
文件大小: 293K
代理商: HN29W6411A
HN29W6411A Series
19
Program, Erase and Erase Verify
Parameter
Symbol
Min
Typ
Max
Unit
Test conditions
Note
Write cycle time
t
CWC
t
SCC
t
CES
t
CEH
t
WP
t
WPH
t
AS
t
AH
t
DS
t
DH
t
OEWS
120
ns
Serial clock cycle time
CE
setup time
CE
hold time
50
ns
0
ns
0
ns
Write pulse time
60
ns
CE
= V
IL
,
OE
= V
IH
Write pulse high time
40
ns
Address setup time
50
ns
Address hold time
10
ns
Data setup time
50
ns
Data hold time
OE
setup time before command
write
OE
setup time before read
10
ns
0
ns
t
OEPS
t
DB
t
ASE
t
ABE
t
ASP
t
CPH
t
CWCC
40
ns
Time to device busy
150
ns
Auto erase time (Sector)
0.8
20
ms
Auto erase time (Block)
0.8
20
ms
Auto program time
CE
pulse high time
0.3
20
ms
200
ns
Write cycle time for control byte
program
2.5
μ
s
SC pulse width
t
SP
t
SPL
t
SDS
t
SDH
t
SW
t
SCS
t
SCHW
t
CE
t
OE
t
DF
t
RP
20
ns
SC pulse low time
20
ns
Data setup time for SC
0
ns
Data hold time for SC
SC setup for
WE
SC setup for
CE
SC hold time for
WE
CE
to output delay
OE
to output delay
OE
high to output float
RES
to write setup time
30
ns
CDE
= V
IL
CDE
= V
IL
20
ns
0
ns
20
ns
120
ns
60
ns
40
ns
CE
= V
IL
,
WE
= V
IH
1
1
ms
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