- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370646 > HN58C66 (Hitachi,Ltd.) 8192-word ×8-bit Electrically Erasable and Programmable CMOS ROM(8k字×8位 EEPROM) PDF資料下載
參數(shù)資料
| 型號(hào)： | HN58C66 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 8192-word ×8-bit Electrically Erasable and Programmable CMOS ROM(8k字×8位 EEPROM) |
| 中文描述： | 8192字× 8位電可擦除和可編程的CMOS光盤（8K的字× 8位的EEPROM） |
| 文件頁(yè)數(shù)： | 17/19頁(yè) |
| 文件大?。?/td> | 172K |
| 代理商： | HN58C66 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)當(dāng)前第17頁(yè)第18頁(yè)第19頁(yè)
HN58C66 Series
17
2. Data Protection at V
CC
On/Off
When V
CC
is turned on or off, the noise on the control pins generated by external circuits (CPU, etc.) may
act as a trigger and turn the EEPROM to program mode by mistake. To prevent this unintentional
programming, the EEPROM must be kept in an unprogrammable state by using a CPU reset signal to
RES
pin.
RES
pin should be kept at V
SS
level when V
CC
is turned on and off. The EEPROM breaks off
programming operation when
RES
becomes low, programming operation doesn’t finish correctly in case
that
RES
falls low during programming operation.
RES
should be kept high for 10 ms after the last data
input.
V
CC
RES
WE
or
CE
100 μs min
10 ms min
1 μs min
Program inhibit
Program inhibit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HN58S256AI | 32768-word ×8-bit Electrically Erasable and Programmable CMOS ROM(256k EEPROM (32k字 ×8位)) |
| HN58S256A | 256 k EEPROM (32-kword x 8-bit) |
| HN58S256AT-20 | 256 k EEPROM (32-kword x 8-bit) |
| HN58S256AT-15 | 256 k EEPROM (32-kword x 8-bit) |
| HN58S65AI | 8192-word ×8-bit Electrically Erasable and Programmable CMOS ROM(8k字×8位 EEPROM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN58C66FP-25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58C66FP25T | 制造商:HIT 功能描述:HN58C66FP-25T |
| HN58C66FP-25T | 制造商:HIT 功能描述:HN58C66FP-25T |
| HN58C66P25 | 制造商:HITCHI 功能描述: |
| HN58C66P-25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。