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參數(shù)資料
| 型號(hào)： | HN58C66 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | 8192-word ×8-bit Electrically Erasable and Programmable CMOS ROM(8k字×8位 EEPROM) |
| 中文描述： | 8192字× 8位電可擦除和可編程的CMOS光盤（8K的字× 8位的EEPROM） |
| 文件頁數(shù)： | 5/19頁 |
| 文件大?。?/td> | 172K |
| 代理商： | HN58C66 |
HN58C66 Series
5
Mode Selection
Pin Mode
CE
OE
WE
RDY/
Busy
RES
I/O
Read
V
IL
V
IH
V
IL
V
IL
X
V
IL
X
*2
V
IH
X
High-Z
V
H
X
*1
Dout
Standby
High-Z
High-Z
Write
V
IH
V
IH
X
V
IL
V
IH
V
IH
X
High-Z to V
OL
High-Z
V
H
V
H
X
Din
Deselect
High-Z
Write inhibit
High-Z
X
V
IL
V
IL
X
Data
polling
V
IL
X
V
IH
X
V
OL
High-Z
V
H
V
IL
Data out (I/O7)
Program reset
Notes: 1. Refer to the recommended DC operating condition.
2. X = Don’t care.
High-Z
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage
*1
V
CC
Vin
–0.6 to +7.0
V
Input voltage
*1
–0.5
*2
to +7.0
V
Operating temperature range
*3
Topr
0 to +70
°
C
°
C
Storage temperature range
Notes: 1. With respect to V
SS
2. Vin min = –3.0 V for pulse width
≤
50 ns
3. Including electrical characteristics and data retention
Tstg
–55 to +125
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
V
IL
V
IH
V
H
Topr
4.5
5.0
5.5
V
Input voltage
–0.3
—
0.8
V
2.2
—
V
CC
+ 1.0
V
CC
+ 1.0
70
V
V
CC
– 0.5
0
—
V
Operating temperature
—
°
C
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| HN58S256AI | 32768-word ×8-bit Electrically Erasable and Programmable CMOS ROM(256k EEPROM (32k字 ×8位)) |
| HN58S256A | 256 k EEPROM (32-kword x 8-bit) |
| HN58S256AT-20 | 256 k EEPROM (32-kword x 8-bit) |
| HN58S256AT-15 | 256 k EEPROM (32-kword x 8-bit) |
| HN58S65AI | 8192-word ×8-bit Electrically Erasable and Programmable CMOS ROM(8k字×8位 EEPROM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HN58C66FP-25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
| HN58C66FP25T | 制造商:HIT 功能描述:HN58C66FP-25T |
| HN58C66FP-25T | 制造商:HIT 功能描述:HN58C66FP-25T |
| HN58C66P25 | 制造商:HITCHI 功能描述: |
| HN58C66P-25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EEPROM |
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