參數(shù)資料
型號: HN58C66
廠商: Hitachi,Ltd.
英文描述: 8192-word ×8-bit Electrically Erasable and Programmable CMOS ROM(8k字×8位 EEPROM)
中文描述: 8192字× 8位電可擦除和可編程的CMOS光盤(8K的字× 8位的EEPROM)
文件頁數(shù): 6/19頁
文件大?。?/td> 172K
代理商: HN58C66
HN58C66 Series
6
DC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 5 V
±
10%)
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Input leakage current
I
LI
2
*1
μ
A
V
= 5.5 V,
Vin = 5.5 V
Output leakage current
I
LO
2
μ
A
V
= 5.5 V,
Vout = 5.5/0.4 V
CE
= V
IH
,
CE
= V
CC
Iout = 0 mA,
Duty = 100%,
Cycle = 1
μ
s at
V
CC
= 5.5 V
Iout = 0 mA,
Duty = 100%
Cycle = 250 ns
at V
CC
= 5.5 V
V
CC
current (standby)
V
CC
current (active)
I
CC1
I
CC2
1
mA
8
mA
25
mA
Input low voltage
V
IL
V
IH
V
H
V
OL
V
OH
–0.3
*2
0.8
V
Input high voltage
2.2
V
CC
+ 1.0
V
CC
+ 1.0
0.4
V
V
CC
– 0.5
V
Output low voltage
V
I
OL
= 2.1 mA
I
OH
= –400
μ
A
Output high voltage
Notes: 1. I
LI
on
RES
= 100
μ
A max.
2. V
IL
min = –1.0 V for pulse width
50 ns
2.4
V
Capacitance
(Ta = 25
°
C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Input capacitance
Cin
*1
6
pF
Vin = 0 V
Output capacitance
Note:
1. This parameter is periodically sampled and not 100% tested.
Cout
*1
12
pF
Vout = 0 V
AC Characteristics
(Ta = 0 to +70
°
C, V
CC
= 5 V
±
10%)
Test Conditions
Input pulse levels: 0.4 V to 2.4 V, 0 to V
CC
(
RES
pin)
Input rise and fall time:
20 ns
Output load: 1TTL gate +100 pF
Reference levels for measuring timing: 0.8 V, 2.0 V
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