參數(shù)資料
型號(hào): HN58C66
廠商: Hitachi,Ltd.
英文描述: 8192-word ×8-bit Electrically Erasable and Programmable CMOS ROM(8k字×8位 EEPROM)
中文描述: 8192字× 8位電可擦除和可編程的CMOS光盤(pán)(8K的字× 8位的EEPROM)
文件頁(yè)數(shù): 8/19頁(yè)
文件大?。?/td> 172K
代理商: HN58C66
HN58C66 Series
8
Write Cycle
Parameter
Symbol
Min
*1
Typ
Max
Unit
Test Conditions
Address setup time
t
AS
t
AH
t
CH
t
CH
t
WS
t
WH
t
OES
t
OEH
t
DS
t
DH
t
WP
t
CW
t
DL
t
BLC
t
BL
t
WC
t
DB
t
DW
t
RP
t
RES
0
ns
Address hold time
CE
to write setup time (
WE
controlled)
CE
hold time (
WE
controlled)
WE
to write setup time (
CE
controlled)
WE
hold time (
CE
controlled)
OE
to write setup time
OE
hold time
150
ns
0
ns
0
ns
0
ns
0
ns
0
ns
0
ns
Data setup time
100
ns
Data hold time
WE
pulse width (
WE
controlled)
CE
pulse width (
CE
controlled)
20
ns
200
ns
200
ns
Data latch time
100
ns
Byte load cycle
0.30
30
μ
s
μ
s
Byte load window
100
Write cycle time
10
*2
ms
Time to device busy
120
ns
Write start time
150
*3
ns
Reset protect time
100
μ
s
μ
s
Reset high time
Notes: 1. Use this device in longer cycle than this value.
2. t
must be longer than this value unless polling technique or RDY/
Busy
are used. This device
automatically completes the internal write operation within this value.
3. Next read or write operation can be initiated after t
DW
if polling technique or RDY/
Busy
are used.
1
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