參數(shù)資料
型號(hào): HY5PS121623LF
英文描述: 32Mx16|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
中文描述: 32Mx16 | 1.8 | 8K的| D43/D44/D54/D55 |的DDR II內(nèi)存- 512M
文件頁數(shù): 16/66頁
文件大?。?/td> 862K
代理商: HY5PS121623LF
Rev. 0.52/Nov. 02 16
HY5PS12423(L)F
HY5PS12823(L)F
HY5PS121623(L)F
WRITE MASK TRUTH TABLE
Function
CKE
n-1
CKE
n
CS, RAS, CAS, WE
DM
ADDR
A10/
AP
BA
Note
Data Write
H
X
X
L
X
1
Data-In Mask
H
X
X
H
X
1
Note :
1.
Write Mask command masks burst write data with reference to LDQS/UDQS(Data Strobes) and it is not related
with read data. In case of x16 data I/O, LDM and UDM control lower byte(DQ0~7) and Upper byte(DQ8~15)
respectively.
相關(guān)PDF資料
PDF描述
HY5PS12423F 128Mx4|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
HY5PS12423LF 128Mx4|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
HY5PS12823F 64Mx8|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
HY5PS12823LF 64Mx8|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M
HY5P Current Transducers HY 5 to 25-P/SP1
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