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參數(shù)資料
| 型號： | HYB 39S128400CT |
| 廠商： | SIEMENS AG |
| 英文描述： | 128-Mbit(4banks × 8MBit × 4) Synchronous DRAM(128M(4列 × 8M位 × 4)同步動態(tài)RAM) |
| 中文描述： | 128兆位（4banks × 8MBit × 4）同步DRAM（128M的（4列× 800萬位× 4）同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 15/42頁 |
| 文件大?。?/td> | 280K |
| 代理商： | HYB 39S128400CT |
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HYB 39S128400/800/160CT(L)
128-MBit Synchronous DRAM
Data Book
15
1.00
Electrical Characteristics
Absolute Maximum Ratings
Operating Temperature Range.......................................................................................0 to + 70
°
C
Storage Temperature Range..................................................................................
– 55 to + 150
°
C
Input/Output Voltage......................................................................................... – 0.3 to
V
DD
+ 0.3 V
Power Supply Voltage
V
DD
/
V
DDQ
.............................................................................. – 0.3 to + 4.6 V
Power Dissipation....................................................................................................................... 1 W
Data out Current (short circuit) ............................................................................................... 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Notes
1. All voltages are referenced to
V
SS
.
2.
V
IH
may overshoot to
V
DD
+ 2.0 V for pulse width of < 4 ns with 3.3 V.
V
IL
may undershoot to
– 2.0 V for pulse width < 4.0 ns with 3.3 V. Pulse width measured at 50% points with amplitude
measured peak to DC reference.
Recommended Operation and DC Characteristics
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
,
V
DDQ
= 3.3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
V
DD
+ 0.3
0.8
Input High Voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.0
V
1, 2
Input Low Voltage
Output High Voltage (
I
OUT
= – 4.0 mA)
Output Low Voltage (
I
OUT
= 4.0 mA)
Input Leakage Current, any input
(0 V <
V
IN
<
V
DDQ
, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
– 0.3
V
1, 2
2.4
–
V
–
–
0.4
V
μ
A
–
– 5
5
–
I
O(L)
– 5
5
μ
A
–
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Values
Unit
min.
max.
Input Capacitance (CLK)
C
I1
C
I2
2.5
3.5
pF
Input Capacitance
(A0 - A11, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
2.5
3.8
pF
Input/Output Capacitance (DQ)
C
IO
4.0
6.0
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S128400CT-7 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM |
| HYB39S128400CT-7.5 | 制造商:Infineon Technologies AG 功能描述:32M X 4 SYNCHRONOUS DRAM, 5.4 NS, PDSO54 |
| HYB39S128400CT-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM |
| HYB39S128400CT-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM |
| HYB39S128400F | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:128-MBit Synchronous DRAM |
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