- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370744 > HYB 39S128400CT (SIEMENS AG) 128-Mbit(4banks × 8MBit × 4) Synchronous DRAM(128M(4列 × 8M位 × 4)同步動態(tài)RAM) PDF資料下載
參數(shù)資料
| 型號： | HYB 39S128400CT |
| 廠商： | SIEMENS AG |
| 英文描述： | 128-Mbit(4banks × 8MBit × 4) Synchronous DRAM(128M(4列 × 8M位 × 4)同步動態(tài)RAM) |
| 中文描述： | 128兆位（4banks × 8MBit × 4）同步DRAM（128M的（4列× 800萬位× 4）同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 19/42頁 |
| 文件大?。?/td> | 280K |
| 代理商： | HYB 39S128400CT |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁當前第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁
HYB 39S128400/800/160CT(L)
128-MBit Synchronous DRAM
Data Book
19
1.00
Notes
1. For proper power-up see the operation section of this data sheet.
2. AC timing tests have
V
IL
= 0.4 V and
V
IH
= 2.4 V with the timing referenced to the 1.4 V crossover
point. The transition time is measured between
V
IH
and
V
IL
. All AC measurements assume
t
T
= 1 ns with the AC output load circuit shown in figure below. Specified
t
AC
and
t
OH
parameters
are measured with a 50 pF only, without any resistive termination and with a input signal of 1V /
ns edge rate between 0.8 V and 2.0 V.
3. If clock rising time is longer than 1 ns, a time (
t
T
/2
0.5) ns has to be added to this parameter.
4. If
t
T
is longer than 1 ns, a time (
t
T
1) ns has to be added to this parameter.
5. These parameter account for the number of clock cycle and depend on the operating frequency
of the clock, as follows:
the number of clock cycle = specified value of timing period (counted in fractions as a whole
number)
6. Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after
CKE returns high. Self Refresh Exit is not complete until a time period equal to
t
RC
is satisfied
once the Self Refresh Exit command is registered.
SPT03404
CLOCK
2.4 V
0.4 V
INPUT
HOLD
t
SETUP
t
t
T
OUTPUT
1.4 V
t
LZ
AC
t
t
AC
OH
t
HZ
t
1.4 V
CL
t
CH
t
50 pF
I/O
Measurement conditions for
t
AC
and
t
OH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB 39S128800CT | 128-Mbit(4banks × 4MBit × 8) Synchronous DRAM(128M(4列 × 4M位 × 8)同步動態(tài)RAM) |
| HYB 39S16160CT-5.5 | 1M × 16-Mbit Synchronous DRAM for High-Speed Graphics Applications(16M位(1M × 16)同步動態(tài)RAM(用于高速圖形場合)) |
| HYB 39S16160CT-6 | 1M × 16-Mbit Synchronous DRAM for High-Speed Graphics Applications(16M位(1M × 16)同步動態(tài)RAM(用于高速圖形場合)) |
| HYB 39S16160CT-7 | 1M × 16-Mbit Synchronous DRAM for High-Speed Graphics Applications(16M位(1M × 16)同步動態(tài)RAM(用于高速圖形場合)) |
| HYB 39S256160T | 256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4列 × 4M位 × 16)同步動態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S128400CT-7 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM |
| HYB39S128400CT-7.5 | 制造商:Infineon Technologies AG 功能描述:32M X 4 SYNCHRONOUS DRAM, 5.4 NS, PDSO54 |
| HYB39S128400CT-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM |
| HYB39S128400CT-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:128-MBit Synchronous DRAM |
| HYB39S128400F | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:128-MBit Synchronous DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。